? 2009 ixys corporation, all rights reserved v ces = 3000v i c25 = 27a v ce(sat) 3.0v IXGF25N300 ds99995b(11/09) symbol test conditions maximum ratings v ces t j = 25c to 150c 3000 v v cgr t j = 25c to 150c, r ge = 1m 3000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 27 a i c90 t c = 90c 16 a i cm t c = 25c, v ge = 20v, 1ms 140 a ssoa v ge = 20v, t vj = 125c, r g = 5 i cm = 160 a (rbsoa) clamped inductive load v ce 0.8 ? v ces p c t c = 25c 114 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120/4.5..27 nm/lb-in. v isol 50/60hz, 1 minute 4000 v~ weight 5g high voltage igbt for capacitor discharge applications ( electrically isolated tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0v 3000 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 50 a note 2 ,t j = 125c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 25a, v ge = 15v, note 1 3.0 v i c = 75a 5.5 v features silicon chip on direct-copper bond (dcb) substrate isolated mounting surface 4000v electrical isolation high peak current capability low saturation voltage molding epoxies meet ul 94 v-0 flammability classification applications capacitor discharge pulser circuits advantages high power density easy to mount 1 = gate 5 = collector 2 = emitter isoplus i4-pak tm isolated tab 1 5 2
ixys reserves the right to change limits, test conditions, and dimensions. IXGF25N300 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 16 26 s i c(on) v ge = 15v, v ce = 20v, note 1 240 a c ies 2970 pf c oes v ce = 15v, v ge = 20v, f = 1mhz 98 pf c res 36 pf q g(on) 75 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 15 nc q gc 30 nc t d(on) 70 ns t r 240 ns t d(off) 220 ns t f 500 ns r thjc 1.10 c/w r thcs 0.15 c/w r thja 30 c/w resistive switching times i c = 25a, v ge = 15v v ce = 1500v, r g = 5 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus i4-pak tm (hv) outline pin 1 = gate pin 2 = emitter pin 3 = collector tab 4 = isolated notes: 1. pulse test, t < 300 s, duty cycle, d < 2%. 2. device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway.
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